2

On the influence of an ultrathin Al overlayer on GaAs plasma oxide growth kinetics

Année:
1994
Langue:
english
Fichier:
PDF, 530 KB
english, 1994
11

Lattice strain and defect structure of GaAs/native oxide interfaces

Année:
1990
Langue:
english
Fichier:
PDF, 185 KB
english, 1990
14

The nature of mobile hydrogen in a-Si:H—Electrochemical studies

Année:
2006
Langue:
english
Fichier:
PDF, 231 KB
english, 2006
15

Scanning Probe Microscope based Deep-Level Spectroscopy of semiconductor films

Année:
2010
Langue:
english
Fichier:
PDF, 397 KB
english, 2010
20

A model of the small-signal charge DLTS response of traps distributed in both energy and space

Année:
1991
Langue:
english
Fichier:
PDF, 557 KB
english, 1991
21

Spatial Sensitivity Reversal in a Modified DLTS

Année:
1992
Langue:
english
Fichier:
PDF, 540 KB
english, 1992
25

Instability of gap states in phosphorus doped a-Si:H, demonstrated in DLTS

Année:
1987
Langue:
english
Fichier:
PDF, 168 KB
english, 1987
31

New experimental facts on the Staebler–Wronski effect

Année:
1998
Langue:
english
Fichier:
PDF, 75 KB
english, 1998
39

Origin of charged gap states in a -Si:H and their evolution during light soaking

Année:
2004
Langue:
english
Fichier:
PDF, 63 KB
english, 2004
42

DLTS AS A LOCAL PROBE OF CONCENTRATION AND DEPTH OF TRAP LEVELS

Année:
1994
Langue:
english
Fichier:
PDF, 569 KB
english, 1994
48

Grain Boundary Effect on Charge Transport in Pentacene Thin Films

Année:
2011
Langue:
english
Fichier:
PDF, 316 KB
english, 2011